Transistor – KSC1845FTA
These are acquired from a reputable supplier to prevent possibility of counterfeit parts.
Specifications
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EU RoHSCompliant
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TypeNPN
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Product CategoryBipolar Small Signal
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MaterialSi
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ConfigurationSingle
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Number of Elements per Chip1
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Maximum Collector Base Voltage (V)120
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Maximum Collector-Emitter Voltage (V)120
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Maximum Emitter Base Voltage (V)5
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Maximum Collector-Emitter Saturation Voltage (V)0.3@1mA@10mA
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Maximum DC Collector Current (A)0.05
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Maximum Collector Cut-Off Current (nA)50
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Minimum DC Current Gain300@1mA@6V
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Maximum Power Dissipation (mW)500
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Maximum Transition Frequency (MHz)110(Typ)
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Minimum Operating Temperature (°C)-55
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Maximum Operating Temperature (°C)150
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PackagingSingles removed from Ammo Tape
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MountingThrough Hole
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Package Height (mm)5.33(Max)
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Package Length (mm)5.2(Max)
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Package Width (mm)4.19(Max)
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PCB changed3
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Standard Package NameTO-92
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Supplier PackageTO-92
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Pin Count3
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Lead ShapeFormed
Fairchild Semiconductor brings you the solution to your high-voltage BJT needs with their NPN KSC1845FTA general purpose bipolar junction transistor. This bipolar junction transistor’s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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